Graphitization of Glass-like Carbon by Boron Carbide Additives

Boron carbide/n-silicon carbide heterojunction diodes

Modeling of graphitization kinetics during peritectic melting of tungsten carbide

A dynamic computational model developed within the context of the classical theory of phase evolution is applied to the W–C system to simulate the kinetics of graphite nucleation during non-equilibrium peritectic melting of WC. The kinetic variables used in the model are obtained directly from the free energy formulations that characterize the stable and metastable equilibria between WC, liquid...

Shock-wave strength properties of boron carbide and silicon carbide

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide.

Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore's law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahe...

Magnetoresistance in boron carbide junctions